Abstract
Indium-tin oxides (ITO) films were prepared on glass by Ar ion sputtering, ion plating and electron beam melting in vacuum, and tin oxide films were prepared by chemical vapour deposition (CVD) of SnCl4 in methanol containing HF. The chemical state of samples prepared was analyzed by CEMS. ITO films, produced from ITO source materials with higher solubility of tin oxide, showed lower electric resistivity. Amorphous ITO films had larger quadrupole splitting than crystalline ones. The tin oxide films were exposed in hydrogen plasma and hydrogen gas and the change of these films was also assessed by CEMS.
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