Abstract
The single crystal diamond film has been drawn attention for new material such as the electronic devices used in higher temperature. So it is important to understand a mechanism of diamond nucleation on silicon substrate by Chemical Vapor Deposition (CVD) method, but the mechanism has not yet been established because of the difficulty of the observation. Fundamental process of the nucleation of the diamond consists of both the adsorption and the reflection of carbon atoms to the silicon substrate. The details of both phenomena have not yet been clear. In this paper, in order to solve fundamental process of the nucleation of the diamond, molecular dynamics simulation of the adsorption of the carbon atom is conducted. The adsorption phenomenon affected by the velocity and angle of incidence of the carbon atom is presented here. It is shown that the adsorption phenomenon is independent of the velocity and the angle of incidence.
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