Abstract
Single longitudinal mode operation of laterally coupled distributed feedback (DFB) laser diodes (LDs) based on GaN containing 10th-order surface Bragg gratings with V-shaped grooves is demonstrated using i-line stepper lithography and inductively coupled plasma etching. A threshold current of 82 mA, a slope efficiency of 1.7 W/A, a single peak emission at 404.5 nm with a full width at half maximum of 0.04 nm and a side mode suppression ratio of > 23 dB at an output power of about 46 mW were achieved under pulsed operation. The shift of the lasing wavelength of DFB LDs with temperature was around three times smaller than that of conventional ridge waveguide LDs.
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