Abstract
The realisation of 0.1 µm gate AlGaN/GaN high electron mobility transistors grown on high-resistivity silicon substrates is reported. A maximum current density of 750 mA/mm and an extrinsic transconductance of 225 mS/mm are achieved. The devices feature a record current gain cutoff frequency as high as fT=90 GHz, the highest value ever reported from a GaN-based device grown on a silicon substrate. The results demonstrate the great potential of GaN-on-silicon technology for low-cost millimetre-wave applications.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
