Abstract
Toward on-chip photonic integrated circuits (PICs) based on a membrane structure, a lateral junction waveguide-type photodiode fabricated on semi-insulating (SI-) InP substrate was successfully demonstrated. A responsivity of 0.39 A/W was obtained by adopting a bulk GaInAs absorption layer. In addition, a narrow stripe width of 0.85 µm was chosen for the realization of high-speed operation. As a result, a 3 dB bandwidth of 8.8 GHz at a bias voltage of -2 V was attained for a device length of 380 µm, and a clear eye opening was obtained up to 10 Gbps.
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