10 Gbit/s modulation of 1.3 µm GaInNAs lasers up to 110°C

  • Abstract
  • Literature Map
  • References
  • Citations
  • Similar Papers
Abstract
Translate article icon Translate Article Star icon
Take notes icon Take Notes

Uncooled 10 Gbit/s operation of high-T0 ridge waveguide 1.3 µm GaInNAs lasers at ambient temperatures as high as 110°C is demonstrated. The low temperature sensitivity enables use of a constant modulation voltage to obtain clear open eyes with an extinction ratio exceeding 5 dB.

ReferencesShowing 9 of 9 papers
  • Open Access Icon
  • Cite Count Icon 25
  • 10.1364/oe.14.002753
Uncooled 2.5 Gb/s operation of 1.3 μm GaInNAs DQW lasers over a wide temperature range
  • Jan 1, 2006
  • Optics Express
  • Yongqiang Wei + 7 more

  • Cite Count Icon 20
  • 10.1109/lpt.2005.845718
Floor free 10-Gb/s transmission with directly modulated GaInNAs-GaAs 1.35-/spl mu/m laser for metropolitan applications
  • May 1, 2005
  • IEEE Photonics Technology Letters
  • B Dagens + 9 more

  • Cite Count Icon 28
  • 10.1049/el:20053210
High performance 1.28 µm GaInNAs double quantum well lasers
  • Nov 24, 2005
  • Electronics Letters
  • Y.Q Wei + 4 more

  • Cite Count Icon 22
  • 10.1063/1.2170430
High-frequency modulation and bandwidth limitations of GaInNAs double-quantum-well lasers
  • Jan 30, 2006
  • Applied Physics Letters
  • Y Q Wei + 6 more

  • Open Access Icon
  • Cite Count Icon 72
  • 10.1063/1.1558218
The role of hole leakage in 1300-nm InGaAsN quantum-well lasers
  • Mar 4, 2003
  • Applied Physics Letters
  • Nelson Tansu + 1 more

  • Cite Count Icon 149
  • 10.1109/jstqe.2002.801684
A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-μm GaInNAs-based quantum-well lasers
  • Jul 1, 2002
  • IEEE Journal of Selected Topics in Quantum Electronics
  • R Fehse + 6 more

  • Cite Count Icon 21
  • 10.1109/jlt.2005.861128
Highly reliable and high-yield 1300-nm InGaAlAs directly modulated ridge fabry-Perot lasers, operating at 10-gb/s, up to 110/spl deg/C, with constant current swing
  • Jan 1, 2005
  • Journal of Lightwave Technology
  • R Paoletti + 20 more

  • Cite Count Icon 497
  • 10.1109/2944.640627
GaInNAs: a novel material for long-wavelength semiconductor lasers
  • Jun 1, 1997
  • IEEE Journal of Selected Topics in Quantum Electronics
  • M Kondow + 7 more

  • Cite Count Icon 31
  • 10.1016/j.jcrysgro.2004.12.150
Very low threshold current density 1.3 μm GaInNAs single-quantum well lasers grown by molecular beam epitaxy
  • Jan 30, 2005
  • Journal of Crystal Growth
  • S.M Wang + 5 more

CitationsShowing 10 of 33 papers
  • Research Article
  • Cite Count Icon 2
  • 10.1063/1.3256156
Reliability assessment and degradation analysis of 1.3 μm GaInNAs lasers
  • Nov 1, 2009
  • Journal of Applied Physics
  • W Lu + 13 more

The degradation of 1.3 μm GaInNAs lasers was investigated using accelerated aging tests. This was followed by comprehensive characterization, including standard light-current-voltage (L-I-V) characterization, capacitance measurements, photoluminescence microscopy (PLM), on-axis amplified spontaneous emission (ASE) spectra measurements, and photocurrent (PC) and electroluminescence (EL) spectroscopies. The slope efficiency of the device dropped by 50% with a 300% increase in the threshold current after the accelerated aging test. The ideality factors of the aged devices are higher than those of the unaged devices. PLM images showed no evidence of catastrophic optical mirror damage. The measured capacitances of the aged devices are all similar to those of the unaged devices, indicating that there was no significant dopant diffusion in the junction region. Fourier transforms of the ASE spectra showed that no intracavity defects were present in the aged lasers, suggesting that intracavity defects are not responsible for the rapid degradation of the aged devices. Although the PC measurements showed defects at 0.88–0.95 eV and at ∼0.76 eV, these defect signatures did not increase with aging. On the other hand, EL measurements revealed that radiative deep level defects were generated during the aging tests, which may be related to the degradation of the devices. Based on the above measurement results, we identify the generation of radiative deep level defects as the main causes of degradation of these devices.

  • Conference Article
  • 10.1109/nusod.2008.4668272
Static and dynamic performance optimisation of a 1.3 μm GaInNAs ridge waveguide laser
  • Sep 1, 2008
  • J.J Lim + 9 more

In this work, we optimise the structure of an uncooled directly modulated 1.3 mum GaInNAs ridge waveguide laser for high temperature operation. The static and dynamic performance of the optimised design is analyzed using an accurate in-house 2D electro-opto-thermal laser simulator. The optimised structure is shown to have a lower threshold current, higher efficiency, higher modulation bandwidth and lower vertical beam divergence compared to a reference structure with a conventional design. Large-signal 10 Gbit/s digital modulation simulations were performed and demonstrate the improved performance of the optimised structure especially under high temperature operation.

  • Open Access Icon
  • Research Article
  • Cite Count Icon 14
  • 10.1109/jphot.2012.2230251
Experimental Evidence of the Impact of Nitrogen on Carrier Capture and Escape Times in InGaAsN/GaAs Single Quantum Well
  • Dec 1, 2012
  • IEEE Photonics Journal
  • Lifang Xu + 5 more

We report our experimental results and theoretical analysis on carrier escape time in In0.4Ga0.6As1 -yNy/GaAs (y = 0; 0.005) ridge waveguide single-quantum-well (QW) lasers with N-contents of 0% and 0.5%. The experiments were carried out by using novel time-resolved two-color pump-probe transmission measurements. Our results show a significant decrease of carrier escape time with nitrogen incorporation in the InGaAsN QW, which agrees well with the values obtained from the theoretical calculation based on thermally activated hole leakage. The measurement results provide experimental supports for hole leakage theory.

  • Research Article
  • Cite Count Icon 4
  • 10.1049/el:20080199
Very-low-threshold current density 1.29 µm GaInNAs triple quantum well lasers grown by molecular beam epitaxy
  • Mar 27, 2008
  • Electronics Letters
  • H Zhao + 4 more

Very-low-threshold Ga0.62In0.38N 0.007As0.993/GaN0.011As0.989/GaAs triple quantum well (QW) lasers emitting at 1.29m are demonstrated. The laser structure was grown by molecular beam epitaxy after extensive optimisations of growth and in situ annealing conditions. As-cleaved broad-area lasers with a cavity length of 1mm under pulsed operation showed a record low-threshold current density of 400A/cm2 (∼130A/cm2/QW), a high differential efficiency of 0.32W/A/facet and a characteristic temperature of 94K in the temperature range 10 to 110°C. © The Institution of Engineering and Technology 2008.

  • Research Article
  • Cite Count Icon 25
  • 10.1049/iet-opt:20070036
Simulation of double quantum well GaInNAs laser diodes
  • Dec 1, 2007
  • IET Optoelectronics
  • J.J Lim + 13 more

The simulation of double quantum well (QW) GaInNAs ridge-waveguide (RW) lasers is performed over a wide range of cavity lengths and operating temperatures using a comprehensive in-house 2D laser simulator that takes into account all of the major device physics, including current spreading, capture escape processes, drift diffusion in the QW, 2D optical modes and fully resolved lasing spectra. The gain data used by the simulator were fitted to experimental gain spectra measured by the segmented contact method. The gain model includes the band-anticrossing model for the conduction band and a 4×4 k·p model for the valence band. Using a carrier density-dependent and temperature-dependent linewidth broadening parameter, a good fit with experiment over a temperature range of 300–350 K was obtained. A Shockley–Read–Hall (SRH) lifetime of 0.5 ns and an Auger recombination coefficient of 1×10−28 cm6/s, were extracted from the calibration of the laser simulator to experimental device characteristics of broad-area (BA) devices. Using the same set of parameters for BA devices, except for a reduced SRH lifetime of 0.45 ns underneath the etch, 2D simulation results were found to agree well with the measured RW laser operating characteristics. The impact of the various recombination processes in the RW laser at threshold has also been identified using the calibrated laser simulator.

  • Research Article
  • Cite Count Icon 7
  • 10.1016/j.jcrysgro.2008.10.091
Growth of GaInNAs and 1.3 μm edge emitting lasers by molecular beam epitaxy
  • Nov 6, 2008
  • Journal of Crystal Growth
  • S.M Wang + 7 more

Growth of GaInNAs and 1.3 μm edge emitting lasers by molecular beam epitaxy

  • Open Access Icon
  • Research Article
  • Cite Count Icon 12
  • 10.1063/1.3483839
Enhancement of optical quality in metamorphic quantum wells using dilute nitride buffers
  • Aug 30, 2010
  • Applied Physics Letters
  • Shumin Wang + 2 more

Strong enhancement of optical quality in quantum wells by incorporating nitrogen in metamorphic InGaAs buffers grown on GaAs substrates is demonstrated. This has resulted in 3.7 or 5.4 times enhancement of photoluminescence intensity from the metamorphic quantum wells when using dilute nitride superlattice alone or adding nitrogen in a strain compensated GaAs/In0.3Al0.7As superlattice, respectively. This study shows great potentials by incorporating N in metamorphic buffers to further improve the quality of metamorphic optoelectronic devices.

  • Open Access Icon
  • Research Article
  • Cite Count Icon 8
  • 10.1088/1742-6596/92/1/012068
The impact of hot-phonons on the performance of 1.3µm dilute nitride edge-emitting quantum well lasers
  • Dec 1, 2007
  • Journal of Physics: Conference Series
  • R Mackenzie + 5 more

A robust opto-electronic device simulation tool is extended to model the phonon bottleneck in edge-emitting 1.3µm InGaAsN double quantum well (QW) laser diodes. Both the steady state operation and the transient response of the phonon bottleneck are examined as a function of injection current and heatsink temperature. It is found that the hot phonon population can raise the electron and hole temperatures in the QW active region by up to 7K above the equilibrium lattice temperature at moderate injection currents. At high injection currents, it is found that the phonon bottleneck can significantly decrease the optical power.

  • Research Article
  • Cite Count Icon 15
  • 10.1088/0268-1242/30/9/094014
Effect of rapid thermal annealing on InP1−xBix grown by molecular beam epitaxy
  • Jul 7, 2015
  • Semiconductor Science and Technology
  • X Y Wu + 12 more

The effect of post-growth rapid thermal annealing on structural and optical properties of InP1−xBix thin films was investigated. InPBi shows good thermal stability up to 500 °C and a modest improvement in photoluminescence (PL) intensity with an unchanged PL spectral feature. Bismuth outdiffusion from InPBi and strain relaxation are observed at about 600 °C. The InPBi sample annealed at 800 °C shows an unexpected PL spectrum with different energy transitions.

  • Open Access Icon
  • Research Article
  • Cite Count Icon 66
  • 10.1038/srep05449
InPBi Single Crystals Grown by Molecular Beam Epitaxy
  • Jun 26, 2014
  • Scientific Reports
  • K Wang + 9 more

InPBi was predicted to be the most robust infrared optoelectronic material but also the most difficult to synthesize within In-VBi (V = P, As and Sb) 25 years ago. We report the first successful growth of InPBi single crystals with Bi concentration far beyond the doping level by gas source molecular beam epitaxy. The InPBi thin films reveal excellent surface, structural and optical qualities making it a promising new III–V compound family member for heterostructures. The Bi concentration is found to be 2.4 ± 0.4% with 94 ± 5% Bi atoms at substitutional sites. Optical absorption indicates a band gap of 1.23 eV at room temperature while photoluminescence shows unexpectedly strong and broad light emission at 1.4–2.7 μm which can't be explained by the existing theory.

Similar Papers
  • Book Chapter
  • 10.1007/978-3-031-11438-0_24
Constant Voltage Battery Charger Energized from an MPPT Photovoltaic System
  • Jan 1, 2022
  • Javier Rojas + 2 more

Maximum power point tracking (MPPT) enables extracting the maximum power that a photovoltaic panel is capable of delivering regardless of the change in solar irradiance or ambient temperature throughout the day, maximizing its efficiency; it is carried out by means of the control of a DC-DC converter to modify the voltage delivered to the load, such that the variation in the current keeps the power constant. In this work it is designed and simulated an MPPT with an SEPIC converter whose pulse width control signal is determined by the Perturb & Observe (P&O) algorithm to identify the voltage that produces the maximum power, it is available at the output of a BUCK converter controlled by a PID that enables energizing loads with constant voltage despite of the variations produced by the P&O algorithm. The will be energized from a 30 W panel and will charge 9 V batteries at a constant charge voltage, that are commonly used in the robotics club of the Universidad Politécnica Salesiana, located in Quito, Ecuador. Matlab/Simulink is used for simulation considering scenarios of variable irradiance levels and also load variations. The results show a good transient response of the SEPIC converter with the MPPT control to extract the maximum power, moreover the PID c ontroller enables attenuating the ripple obtaining a constant output with a ripple of 2.5%, and does not generate overshoot.KeywordsBatteryConverterPhotovoltaicMPPTPIDSubsystem

  • Research Article
  • Cite Count Icon 31
  • 10.1016/j.applthermaleng.2020.115794
An improved resistance-based thermal model for prismatic lithium-ion battery charging
  • Jul 28, 2020
  • Applied Thermal Engineering
  • Yi Xie + 9 more

An improved resistance-based thermal model for prismatic lithium-ion battery charging

  • Research Article
  • Cite Count Icon 128
  • 10.1016/j.scitotenv.2020.138872
The sensitivity and specificity analyses of ambient temperature and population size on the transmission rate of the novel coronavirus (COVID-19) in different provinces of Iran
  • Apr 21, 2020
  • The Science of the Total Environment
  • Mehdi Jahangiri + 2 more

The sensitivity and specificity analyses of ambient temperature and population size on the transmission rate of the novel coronavirus (COVID-19) in different provinces of Iran

  • Research Article
  • Cite Count Icon 96
  • 10.1016/j.apenergy.2014.10.062
Start-up modes of thermoelectric generator based on vehicle exhaust waste heat recovery
  • Nov 14, 2014
  • Applied Energy
  • Shuhai Yu + 4 more

Start-up modes of thermoelectric generator based on vehicle exhaust waste heat recovery

  • PDF Download Icon
  • Research Article
  • Cite Count Icon 47
  • 10.1109/access.2019.2925388
Analysis and Design of Three-Coil Structure WPT System With Constant Output Current and Voltage for Battery Charging Applications
  • Jan 1, 2019
  • IEEE Access
  • Lin Yang + 5 more

Compared with the traditional plug-in charging system, the wireless charging system for battery charging has broad application prospects due to its significant advantages, such as security, convenience, and aesthetics. In practical applications, in order to prolong the battery lifecycles, it is preferred to charge the battery with constant current (CC) and constant voltage (CV) modes. However, since the battery equivalent resistance varies greatly during charging, it is not easy to design a complete charging system owning CC and CV output characteristics. Besides, the equivalent input impedance of the system is preferably resistive to improve efficiency and enhance power transfer capability; therefore, achieving the zero phase angle (ZPA) operation is extremely important. Hence, a novel three-coil structure WPT system is proposed in this paper to solve the above issues. A comprehensive theoretical analysis for the three-coil system to realize the CC and CV charging modes with perfect ZPA operation at two fixed operating frequencies is presented. Furthermore, due to the parasitic losses of passive components and the instability of the dc input voltage, it is unrealistic to achieve accurate and stable CC and CV outputs through the inherent properties of the circuit itself. Consequently, a simple closed-loop controller is introduced into the system to enable the desired CC and CV charging characteristics with zero voltage switching (ZVS) operation by slightly adjusting the operating frequency. Finally, a confirmatory experimental prototype with 4.6-A charging current and 56-V charging voltage is fabricated to confirm the feasibility and validity of the proposed method. The experimental results agree well with the theoretical analysis.

  • Research Article
  • Cite Count Icon 49
  • 10.1016/j.est.2021.102587
An equivalent circuit model for Vanadium Redox Batteries via hybrid extended Kalman filter and Particle filter methods
  • May 12, 2021
  • Journal of Energy Storage
  • Bahman Khaki + 1 more

An equivalent circuit model for Vanadium Redox Batteries via hybrid extended Kalman filter and Particle filter methods

  • Research Article
  • Cite Count Icon 31
  • 10.3122/jabfm.2016.06.160060
Fecal Immunochemical Test (FIT) for Colon Cancer Screening: Variable Performance with Ambient Temperature.
  • Nov 1, 2016
  • The Journal of the American Board of Family Medicine
  • C A Doubeni + 7 more

Fecal immunochemical tests (FITs) are widely used in colorectal cancer (CRC) screening, but hemoglobin degradation, due to exposure of the collected sample to high temperatures, could reduce test sensitivity. We examined the relation of ambient temperature exposure with FIT positivity rate and sensitivity. This was a retrospective cohort study of patients 50 to 75 years in Kaiser Permanente Northern California's CRC screening program, which began mailing FIT kits annually to screen-eligible members in 2007. Primary outcomes were FIT positivity rate and sensitivity to detect CRC. Predictors were month, season, and daily ambient temperatures of test result dates based on US National Oceanic and Atmospheric Administration data. Patients (n = 472,542) completed 1,141,162 FITs. Weekly test positivity rate ranged from 2.6% to 8.0% (median, 4.4%) and varied significantly by month (June/July vs December/January rate ratio [RR] = 0.79, 95% confidence interval [CI], 0.76 to 0.83) and season. FIT sensitivity was lower in June/July (74.5%; 95% CI, 72.5 to 76.6) than January/December (78.9%; 95% CI, 77.0 to 80.7). FITs completed during high ambient temperatures had lower positivity rates and lower sensitivity. Changing kit design, specimen transportation practices, or avoiding periods of high ambient temperatures may help optimize FIT performance, but may also increase testing complexity and reduce patient adherence, requiring careful study.

  • Discussion
  • Cite Count Icon 2
  • 10.1016/j.cgh.2017.08.013
Issue Highlights
  • Aug 16, 2017
  • Clinical Gastroenterology and Hepatology
  • Ziad F Gellad

Issue Highlights

  • Research Article
  • Cite Count Icon 18
  • 10.1007/s10800-006-9170-7
Thermal runaway of valve-regulated lead-acid batteries
  • Aug 4, 2006
  • Journal of Applied Electrochemistry
  • Junmei Hu + 2 more

Valve-regulated lead-acid (VRLA) batteries that have aged on a float charge at constant voltage occasionally suffer from thermal runaway. Operating conditions for a VRLA battery have been simulated by changing the electrolyte saturation level in the separator and the ambient temperature. The charge current, battery temperature and cell overpressure were measured during current-limited constant-voltage charging. The experiments show that applied voltage, saturation level and ambient temperature are significant variables in the oxygen cycle. However, the saturation level of the electrolyte in the separator pore volume is critical. When it is lower than 80%, thermal runaway occurs readily. Significant corrosion of the positive grid and poor conductivity between the grid and the active mass (AM) is also found in aged VRLA batteries, and many inactive PbSO4 crystals appear on the negative plates. As a result, both positive and negative plates have a very high resistance, which can accelerate thermal runaway.

  • Conference Article
  • Cite Count Icon 5
  • 10.1109/icit45562.2020.9067186
Analysis of CT-CV Charging Technique for Lithium-ion and NCM 18650 Cells Over Temperature Range
  • Feb 1, 2020
  • Vinicius Albanas Marcis + 3 more

This paper presents a constant temperature and constant voltage (CT-CV) based charging technique applied to a Nickel Manganese Cobalt (NMC) 18650 and lithium-ion cells. Analysis and behavior of the cell at different ambient temperature have been investigated in this paper. Moreover, the experimental procedure details, including the implemented CT-CV algorithm for analyzing the charging of batteries are detailed. The proposed CT-CV charging is compared with existing constant current and constant current (CC-CV) under different ambient temperatures and charging current rates. Finally, experimental validations are performed on NCM batteries and the results are presented.

  • Conference Article
  • 10.1109/nssmic.2005.1596270
High Stability Measurement System for the Olimpo IR Calibration Source
  • Jan 1, 2005
  • M Fesquet + 3 more

A specific on-board electronic system has been developed for driving the infra red source calibration of the balloon-borne Olimpo. This system operates at ambient temperature, whereas the source is located on the 2K stage of the cryostat. This electronic system first generates a heating signal on the iridium strip of the source, and then monitors the source temperature stability by several measurements of an NbSi thermometer which is located under the source. Priority in the design was to achieve a high stability measurement, with low heating perturbations of the source, and with a large temperature range of the electronics. The design merges a modulated bias system, with a low noise voltage differential amplifier, and a digital acquisition. The whole system is driven by a microcontroller whose algorithm was optimized to minimize the noise perturbations. Electronic components have been selected for their large temperature operation range, and for their low temperature sensitivity. Moreover, the electronic system is designed to compensate the thermal deviation of the components. The system has been tested successfully with simulated and real IR source for several temperatures. With 600 pW of total sensor dissipation injected during 40 ms, the measurement standard deviation achieved for the resistive value of a 10 k/spl Omega/ thermometer reaches 0.5 /spl Omega/ (48 ppm). Moreover the sensitivity of the electronic for the measurement is of 25 ppm//spl deg/C ranging from -60/spl deg/C to +20/spl deg/C, in agreement with the specifications.

  • Research Article
  • Cite Count Icon 4
  • 10.1016/j.ijleo.2022.170302
A novel FPI with hollow core taper structure for strain and inclination measurements
  • Nov 30, 2022
  • Optik
  • Tingting Gang + 7 more

A novel FPI with hollow core taper structure for strain and inclination measurements

  • Research Article
  • 10.1149/ma2018-02/31/1013
(Invited) High-Performance Si Optical Modulator and Ge Photodetector and Their Application to Silicon Photonics Integrated Circuit
  • Jul 23, 2018
  • Electrochemical Society Meeting Abstracts
  • Junichi Fujikata + 5 more

We designed the optimum Si optical modulator (Si-MOD) structure with applying p-type-doped strained SiGe. By applying the strained Si70Ge30 layer, about twice larger optical modulation efficiency in VπL can be obtained in the simulation. In case of a relaxed Si70Ge30 layer, enhancement factor in VπL decrease to about 50%, but optical loss is comparable to that without a SiGe layer. We demonstrated a high modulation efficiency of 0.67 Vcm, which is about 50% more efficient than that of Si-MODs with just a lateral pn junction. From the Raman spectra and SIMS analyses, Ge composition of SiGe was estimated to be around 35%. Crystalline strain of SiGe was estimated to be 1.7% on the 0.04 mm2 square pattern, which is comparable to the theoretical value. On the other hand, it was estimated to be 1.1% for the selective growth of SiGe on the Si WG with a lateral pn junction. Therefore, biaxial strain of SiGe was a little relaxed, because the selective growth of SiGe pattern has a large aspect ratio with 400 nm width and 800 μm length. The Si-MOD showed 27.3 GHz bandwidth at -3 Vdc with 200μm-long phase-shifter. We demonstrated eye diagrams of NRZ (non-return-to-zero) 40 Gbps of 231-1 PRBS (pseudorandom binary sequence) and PAM (pulse amplitude modulation)-4 40Gbps at 1.3 μm wavelength under the condition of differential RF drive with 1.6-2.0 Vpp at -2Vdc. The optical loss of the Si-MOD is estimated to be 1.0-1.5 dB/mm, which is comparable to that of simulation. With increase in temperature up to 80℃, optical loss increased by about 0.3-0.5 dB, which would originate from band-gap shrinkage of a strained-SiGe layer. We obtained the clear eye diagram at 25 Gbps with 27-1 PRBS from the optical transceiver chip when the CMOS-driver output voltage was 0.9 Vpp and Vdc was -0.3V. ER (extinction ratio) of about 2 dB was obtained in case of 800μm-long phase shifter with 4-divided electrodes. We also studied a high-speed and high-efficiency of surface-illumination type Ge photodetector (Ge-PD) with a 1800 nm thick Ge layer. By optimizing the anti-reflection coating stack structure, high responsivity of 0.8-0.9 A/W was uniformly obtained within the wafer. At 3 Vdc, about 15 GHz bandwidth was obtained. In case of the Ge-PD with thick Ge-layer, photo-carrier transit time mainly limits the frequency bandwidth. Therefore, we optimized the layered structure of Ge thickness on SOI to satisfy the high-responsivity and high-bandwidth. We demonstrated an output waveform from integrated CMOS-TIA (trans-impedance amplifier) at 25 Gbps with 27-1 PRBS at 1.3 μm wavelength at 3.3 Vdc. Clear eye opening was obtained, which would contribute to the efficient optical interconnect.

  • PDF Download Icon
  • Research Article
  • Cite Count Icon 26
  • 10.3390/photonics3020017
Wide Spectral Characteristics of Si Photonic Crystal Mach-Zehnder Modulator Fabricated by Complementary Metal-Oxide-Semiconductor Process
  • Apr 2, 2016
  • Photonics
  • Yosuke Hinakura + 3 more

Optical modulators for optical interconnects require a small size, small voltage, high speed and wide working spectrum. For this purpose, we developed Si slow-light Mach-Zehnder modulators via a 180 nm complementary metal-oxide-semiconductor process. We employed 200 μm lattice-shifted photonic crystal waveguides with interleaved p-n junctions as phase shifters. The group index spectrum of slow light was almost flat at ng ≈ 20 but exhibited ±10% fluctuation over a wavelength bandwidth of 20 nm. The cutoff frequency measured in this bandwidth ranged from 15 to 20 GHz; thus, clear open eyes were observed in the 25 Gbps modulation. However, the fluctuation in ng was reflected in the extinction ratio and bit-error rate. For a stable error-free operation, a 1 dB margin is necessary in the extinction ratio. In addition, we constructed a device with varied values of ng and confirmed that the extinction ratio at this speed was enhanced by larger ng up to 60. However, this larger ng reduced the cutoff frequency because of increased phase mismatch between slow light and radio frequency signals. Therefore, ng available for 25 Gbps modulation is limited to up to 40 for the current device design.

  • Research Article
  • Cite Count Icon 10
  • 10.3389/fchem.2022.996812
2-(1,2,4-triazole-5-yl)-1,3,4-oxadiazole as a novel building block for energetic materials
  • Aug 26, 2022
  • Frontiers in Chemistry
  • Zheting Dong + 4 more

The exploration of novel nitrogen-rich heterocyclic building blocks is of importance in the field of energetic materials. A series of 2-(1,2,4-triazole-5-yl)-1,3,4-oxadiazole derivatives based on a new energetic skeleton have been first synthesized by a simple synthetic strategy. All three compounds are well-characterized by IR spectroscopy, NMR spectroscopy and thermal analysis. The compounds 5 and 8 are further characterized by single-crystal X-ray diffraction analysis. 8 and its salts (8a-8c) possess relative high decomposition temperature and low sensitivity, while 5 exhibits low decomposition temperature and high sensitivity. According to EXPLO5 calculation results of detonation performance, both 5 and 8 display acceptable detonation velocities (D) of 8450 m/s and 8130 m/s and detonation pressures (P) of 31.6 GPa and 29.2 GPa, respectively. Furthermore, 5 containing a rare diazonium ylide structure shows high impact sensitivity (4.5 J), making it has a potential as a primary explosive.

More from: Electronics Letters
  • Research Article
  • 10.1049/ell2.70359
MOE‐IR: Infrared Dim Small Target Detection Method With Mixture of Experts Feature Extraction
  • Jan 1, 2025
  • Electronics Letters
  • Zhengkui Weng + 3 more

  • Research Article
  • 10.1049/ell2.70236
Low Power CMOS Stochastic Bit Based Ising Machine and Its Application to Graph Coloring Problem
  • Jan 1, 2025
  • Electronics Letters
  • Honggu Kim + 3 more

  • Open Access Icon
  • Research Article
  • 10.1049/ell2.70235
An Efficient LSEF‐Based Algorithm for Binary Phase‐Coded MIMO Radar Waveform Design
  • Jan 1, 2025
  • Electronics Letters
  • Jiahui Cao + 5 more

  • Research Article
  • 10.1049/ell2.70289
Implementation and Performance Analysis of RTK‐GNSS in Wearable Devices for Athletes in Harsh Environments
  • Jan 1, 2025
  • Electronics Letters
  • Mingu Kim + 3 more

  • Open Access Icon
  • Research Article
  • 10.1049/ell2.70217
Multistatic Synthetic Aperture Radar Autofocus for Back Projection Imaging of a Moving Target
  • Jan 1, 2025
  • Electronics Letters
  • Anmol Rattan + 2 more

  • Research Article
  • 10.1049/ell2.70227
Deep‐Learning‐Based Pilot Optimization for Near‐Field Channel Estimation in Ultra‐Massive MIMO
  • Jan 1, 2025
  • Electronics Letters
  • Zexian Chen + 4 more

  • Research Article
  • 10.1049/ell2.70292
Cigarette Quality Problem Prediction Based on WOA‐BiLSTM‐SPA
  • Jan 1, 2025
  • Electronics Letters
  • Zhipeng Niu + 5 more

  • Open Access Icon
  • Research Article
  • 10.1049/ell2.70148
A 6‐b 875‐MS/s SAR ADC with charge‐pump based pipelined background metastability calibration
  • Jan 1, 2025
  • Electronics Letters
  • Yunkuk Park + 2 more

  • Research Article
  • 10.1049/ell2.70181
Time‐Based Wireless Synchronous Detection of Bioimpedance Signals
  • Jan 1, 2025
  • Electronics Letters
  • Virgilio Valente + 1 more

  • Research Article
  • 10.1049/ell2.70362
A Study on Coordinated and Optimal Allocation of Wind Generation and Storage in a Microgrid Based on Power Balancing
  • Jan 1, 2025
  • Electronics Letters
  • Yiyi Huang + 3 more

Save Icon
Up Arrow
Open/Close
  • Ask R Discovery Star icon
  • Chat PDF Star icon

AI summaries and top papers from 250M+ research sources.

Search IconWhat is the difference between bacteria and viruses?
Open In New Tab Icon
Search IconWhat is the function of the immune system?
Open In New Tab Icon
Search IconCan diabetes be passed down from one generation to the next?
Open In New Tab Icon