Abstract
The structure and electrical resistance of La0.67Ca0.33MnO3(40 nm) epitaxial films grown quasicoherently on the surface of LaAlO3(001) substrates are investigated. Compressive mechanical stresses that are active in the substrate plane during nucleation and growth encourage a decrease in the effective unit cell volume and an increase in the relative concentration of tetravalent manganese ions in the manganite layers. This leads to a decrease in the temperature of the maximum in the temperature dependence of the electrical resistivity of the films by approximately 90 K compared to the Curie temperature for the corresponding stoichiometric bulk crystals. It is found that, at T < 120 K and μ0 H = 0 (where H is the magnetic field strength), the measuring current depends nonlinearly on the voltage V b applied to the contacts. An increase in the applied voltage V b and in the magnetic field strength H favors linearization of the current-voltage characteristics of the films.
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