Abstract
The characteristics of advanced semiconductor devices are affected by contamination due to impurity atoms with sizes at the nanometer level, so it is very important to evaluate such contamination with nanometer-level resolution. In order to cope with this task, we have developed an x-ray elemental mapping system, attached to a 300-kV FE-TEM, with an information limit of 0.11 nm.Both small spot size and sufficient probe current are necessary for high-resolution and highsensitivity x-ray elemental mapping. The elemental mapping is performed with the scanning transmission electron microscope(STEM) mode. For high-resolution STEM imaging, the objective lens works with high excitation as a condenser-objective single lens where the aberrations of the other illuminating lenses are demagnified to negligible level, allowing the extremely small spot size to be obtained. The probe current, however, decreases in proportion to the square of the demagnification of the illuminating system. In this study, the optimum illuminating condition for elemental mapping is examined.
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