Abstract
1 meV electron irradiation and post thermal annealing effects of GaInAsN bulk material with bandgap energy of 1 eV was studied by low-temperature photoluminescence (PL). The nitrogen proportion of the samples was confirmed by high-resolution X-ray diffraction measurement as 0.26%. The result shows that the PL intensity and high activation energy non-radiative centers of GaInAsN materials degraded seriously due to the irradiation induced large number of defects. The PL enhancement phenomena were observed in all samples after rapid thermal annealing (RTA) at 650 ∘C for five minutes. The irradiation and RTA caused PL peak red-shift and blue-shift have been discussed.
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