Abstract
A superior infrared (IR) sensor of D *=8.0×10 8 cm Hz 1/2/W with a micro-machined structure has been successfully fabricated. An increase in sensitivity was realized by using a boron doped hydrogenated amorphous silicon carbide (a-Si 1− x C x :H) film with an activation energy, E a, and also reducing its noise. Structural uniformity and carrier density were changed by controlling deposition parameters. The 1/f noise (flicker noise) was reduced by decreasing the amount of Si–CH 3 and C–H n bonds in the a-Si 1− x C x :H. Though the doping increased the structural disorder, the 1/f noise was also reduced as the doping level increased. We conclude that the 1/f noise does not originate from the structural disorder nor neutral dangling bonds which act as recombination centers, but from the structural non-uniformity causing fluctuations of the carrier conduction. Comparing films with the same E a at different doping levels and CH 4/SiH 4 ratio, heavily doped films show lower 1/f noise.
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