1.2-kV 4H-SiC SenseFET With Monolithically Integrated Sensing Resistor

Abstract

A 1.2 kV rated 4H-SiC SenseFET structure with monolithically integrated sensing resistor is proposed and experimentally demonstrated. The SenseFET was fabricated on a 6-inch SiC wafer using the same fabrication process as the conventional MOSFET, where Tungsten-Silicided (WSi2) Poly-Si layer was patterned to form the Poly-Si gate and sensing resistor, ${R}_{S}$ , simultaneously. No impact of the integration of the Sense MOSFET and sense resistor on blocking characteristics was confirmed. Good linearity (within ±10%) of the sense voltage with main MOSFET drain current was observed, independent of drain current level, gate bias voltage, and temperature.