Abstract
A low-power wideband common-gate (CG) low-noise amplifier (LNA) presented . The CG LNA uses double g m enhancement to provide input matching under low-power consumption. Feed-forward noise cancellation (FFNC) is employed in the LNA to suppress the noise from the CG transistor. The LNA is designed and fabricated in TSMC 130-nm CMOS technology. This LNA can achieve a maximum gain of 14 dB with a 3 dB bandwidth from 350 to 950 MHz. The LNA consumes 0.5 mA current under a 0.8-V supply. The average noise figure of the LNA is 4.0 dB. The core area of the LNA is 0.06 mm2.
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