Abstract
Manufacturing the next generation of devices will demand lithographic capability in the sub 0.18 μm range. The phase shift mask (PSM) is a key emerging technology thought to be extending 248 nm optical lithography. Using the Levenson PSM technique allows us to improve resolution by as much as 50% at gate level. This paper describes the lithographic performances of Shipley UV5 photoresist on SiOxNy BARC, using alternating PSM and an ASM/90 Deep UV stepper. CD measurement was done on OPAL 7830i metrology SEM. Results on sub 0.18 μm design rules are presented: • - The first part concerns experimental conditions: masks, process conditions, anti-reflective substrates, etching and metrology are discussed. • - The second part concerns lithographic performances: process linearity from 0.12 μm to 0.18 μm, 0.12 μm isolated line process latitudes of 7% Energy Latitude for 0.8 μm DOF have been exhibited. Finally we try to evaluate proximity effect and the ultimate resolution of this technology.
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