Abstract
Optical gain characteristics of type-II GaAsSb/InGaNAs/GaAs trilayer quantum well structures were studied using multi-band effective mass theory. The results were compared with those of GaAsSb/InGaNAs/GaAs trilayer quantum well structures. In the case of GaAsSb/InGaNAs/GaAs trilayer quantum well structure, the energy difference between the first two subbands in the valence band is smaller than that of GaAsSb/InGaNAs/GaAs trilayer quantum well structure. Also, GaAsSb/InGaNAs/GaAs trilayer quantum well structure shows larger optical gain than GaAsSb/InGaNAs/GaAs trilayer quantum well structure. This means that GaAsSb/InGaNAs/GaAs system is promising as long-wavelength optoelectronic devices for optical communication.
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