Abstract
In this paper, fabrication of beta-ironsilicide (β-FeSi2)-base metal–insulator–semiconductor diode devices is described. β-FeSi2 films have been prepared by co-sputtering of Fe and Si followed by thermal annealing. The [202] X-ray diffraction peak of β-FeSi2 was observed at 2θ=29° when both the Fe–Si chemical composition and annealing temperature were optimized. The prepared β-FeSi2 films have been thermally oxidized in an O2 gas atmosphere. Using the techniques above, we fabricated Al/oxidized-FeSi2/β-FeSi2/p-Si structured devices, which displayed diode properties.
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