Abstract
It is known that not only diamond grain but film can be synthesized from gas phase. In this study, when synthesizing diamond from hydrogen and methane mixed gas by microwave plasma CVD, effect of depositing condition on diamond quality is experimentally examined. Moreover forming process of diamond film is observed. The synthesizing system consists of 2.45GHz microwave source, reaction chamber made of silica glass, gas supplying and evacuating systems. (100) face of silicon wafer polished with 1μm diamond is used as a substrate. By changing microwave power, methane concentration, substrate temperature, substrate dimention, reaction time and background pressure, synthesizing experiments are carried out. Nucleation density and growth rate are examined. Then diamond quality is estimated by X-ray diffraction and Raman spectra. Results obtained are as follows : In the case of using 40mm in diameter reaction tube, 8×8mm substrate is suitable. Under the condition of methane concentration 1%, gas pressure 5.3kPa, microwave power 300W and substrate temperature 860°C, well crystallized diamond similar to natural one can be obtained. Diamond film is formed through following processes, nucleation - growth of nuclei to grains - conecting grains-diamond film.
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