Abstract
Quantum dots (QD) structures of II-VI semiconductors such as CdSe and CdTe have been fabricated by molecular beam epitaxy. Self-assembling growth modes were studied by reflection high-energy electron diffraction and photoluminescence (PL). The CdSe QD on ZnSe are correlated with the Stranski-Krastanov mode, and the CdTe QD are correlated with the Volmer-Weber mode. The PL intensity of the multi-QD structures increases with the thickness of the ZnSe barrier layer and saturates at a thickness of about 400Å. Diode structures were fabricated, including the CdSe multi-QD layers at the center of the ZnSe pn junction. The diodes emitted green injection electroluminescence at 77 K and room temperature. This emission comes from the QD, compared with the PL spectrum and the injection-luminescence spectrum of the ZnSe pn junction without the CdSe quantum dots.
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