Abstract
We have fabricated and demonstrated fundamental characteristics of an image sensor integrated with Si-LED using standard S1Ge-B1CMOS process technology Two types of LEDs, avalanche and Zener, were fabricated, in terms of breakdown mode The avalanche type LED was found to have better emission efficiency. We also studied the dependence of the distance between LED and APS on the discharge characteristics of the APS and found that over 500 ii m is required to suppress the effect from the LED
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