Abstract
Using atmospheric pressure plasma CVD (chemical vapor deposition) technique, hydrogenated amorphous Si1-xCx (a-Si1-xCx:H) films were deposited with extremely high deposition rate. The films were prepared on Si(001) wafers in atmospheric pressure VHF (very high frequency) plasma of gas mixtures containing He, H2, SiH4 and CH4. Film properties (structure, density and composition of a-Si1-xCx:H) were studied as a function of CH4 concentration by TEM (transmission electron microscopy), AES (Auger electron spectroscopy) and IR (infrared) absorption spectroscopy. Relation between IR absorption spectra and chemical resistance of the films to 15% KOH solution was also investigated. The maximum deposition rate was 50nm/s, which was more than 10 times faster than that achieved by the conventional plasma CVD technique. It was found that CH4 molecules contributed to the film growth when SiH4 was co-existed with SiH4 to CH4 concentration ratio of 1/10. In this case, C to Si composition ratio in the film was 2 (a-Si0.33C0.67:H). The density of a-Si1-xCx:H film was about .1.5g/cm3 being less than half of the crystalline value of SiC. The a-Si0.33C0.67:H film was not etched by KOH solution, which was supported by IR analysis of the Si-C stretching vibration mode.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of the Japan Society for Precision Engineering
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
