Abstract
Effects of annealing temperature on the crystalline and magnetic properties of YIG films grown by solid phase epitaxy. The eptiaxy films were made by annealing Fe-Y-O amorphous films in the air at 550-1050 which were sputtered on GGG (111) substrates in a conventional rf sputtering system. Crystallization temperature of Fe-Y-O amorphous films on GGG (111) substrate was between 600 and 650 which is much lower than that Fe-Y-O powder prepared by sol-gel method. Excellent epitaxial growth of YIG films could be conformed by the facts that the diffraction intensity of YIG (888) plane was comparable with that of GGG (888) plane and full width at half maximum of YIG (888) rocking curve was smaller than 0.14 when films were annealed at 1050 . It could be seen that it is necessary to anneal the films at higher temperature for an excellent epitaxy because lattice parameter of YIG films were smaller and the peak of YIG (888) plane is higher and narrower with increasing annealing temperature. Films annealed at higher temperature shows M-H loop with perpendicular anisotropy which was due to 0.15％ lattice mismatch between YIG and GGG.
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