Abstract
Characteristic X-ray spectra are inherently accompanied by the tail spectra in the low energy side when X-rays are detected with a semiconductor X-ray detector. The tail spectra of Mg, Al, Si, P, S, Cl, K, Ca, Ti, Cr and Mn KX-rays have been observed using two different Si(Li) X-ray detectors. An annular source of 55Fe has been used to excite the Mg (1.25 keV) to Ti (4.5 keV) KX-rays, and 54Mn and 55Fe sources have been used for the detection of Cr (5.4 keV) and Mn (5.9 keV) KX-rays, respectively. Observed intensity ratios of the tail area Nt to the Gaussian X-ray peak area NP have exhibited to change remarkably at the Si-K adsorption edge energy 1.84 ke V. When X-ray spectra detected with different Si(Li) detectors are compared at some specific characteristic X-ray, different values of Nt/Np intensity ratios as well as different line shapes of tail spectra have been observed. Using a simple model, the thickness of Si layer which generates the tail spectrum has been estimated, i.e., the thicknesses are about 0.05 micron for one detector and 0.09 micron for the other detector. The generation of the tail spectrum is known to be partially due to the escape effect of photoelectrons or Auger electrons from the intrinsic region.(ABSTRACT TRUNCATED AT 250 WORDS)
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