Abstract
AbstractThe composition and parameters of energy bands in thin SiO_2 films grown on the surface of a free Si/Cu film system have been studied. It has been shown that unlike SiO_2 films grown on thick films, the value of E _ g for thin SiO_2 films is no higher than ~4.1 eV. This is explained by the presence of Si impurity atoms and nonstoichiometric oxides in the SiO_2 film, which arise because of the impossibility of heating the system above 700 K.
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