Оптимизация толщины слоя In-=SUB=-0.3-=/SUB=-Ga-=SUB=-0.7-=/SUB=-As в трехкаскадном In-=SUB=-0.3-=/SUB=-Ga-=SUB=-0.7-=/SUB=-As/GaAs/In-=SUB=-0.5-=/SUB=-Ga-=SUB=-0.5-=/SUB=-P солнечном элементе

Abstract

The search of the optimal absorbing layer thickness in the bottom In0.3Ga0.7As subcell of the triple-junction In0.3Ga0.7As/GaAs/In0.5Ga0.5P solar cell was carried out assisted by the Sentaurus TCAD software package, depending on the minority charge carrier lifetime in this layer. The lifetime value was set manually and it was in the range from 17 ps to 53 ns. The calculation results showed that the optimal thickness varies from 0.9 to 7.5 μm. The estimation of the efficiency contribution of the bottom In0.3Ga0.7As subcell to the given triple-junction solar cell, at various lifetime values, was made. Its value varied from 1 to 7%.