Напряженно-деформируемое состояние гетероструктуры In1-xGaxAs/GaAs

Abstract

There are no models in use that would take into account the influence of internal deformations in strained structures on the key parameters of heterojunctions depending on the concentration of layer's components and thickness. The aim of the present paper is to determine the dependence of elastic strains and deformations and define changes in zone diagram of In1-xGaxAs/GaA structure depending of the concentration of components and thicknesses of layer and substrate. The paper features calculation of strains in In1-xGaxAs/GaA heterostructure at different correlations between the thicknesses of contacting semiconductors. The calculated values of conduction band edge shift and valence-band splitting in substrate and layer allow the authors to define the dependence between the alteration of band gap width in presence of deformation produced by the change of the thicknesses of layer and substrate and concentration of components. The authors arrive at the definition, according to which the stress-strained state of In1-xGaxAs/GaA heterojunction leads to remarkable changes in its energy band structure. The paper includes equation of the dependence of main parameters of the energy band zone diagram of heterojunction on concentrations of components and proportion of thicknesses. The selection of correlations between substrate and layer thicknesses gives possibilities for a forecast and, further, management of parameters of the zone diagram and, consequently, of electronic properties of In1-xGaxAs/GaA heterojunctions. As a result of the research, the calculation formula of band gap width changes can be seen as a basis for analysis of changes being subject to alterations in concentration of components and correlation between layer and substrate thicknesses in elastically strained heterostructure.