Abstract
The behavior of nickel and hydrogen impurities in silicon has been studied by deep-level transient spectroscopy (DLTS) and Raman spectroscopy. It is shown that the vibrations of Ni and H atoms in Si are in the range of 925-985 cm-1. The DLTS spectra in n - and p -type silicon doped with Ni atoms exhibit two deep levels with energies Ev +0.17 eV and Ec -0.42 eV. It was found that during chemical etching in Si doped with Ni, various hydrogen-bonded defect complexes are formed, the energies of which are Ec -0.18 eV, Ec -0.54 eV, Ev +0.26 eV, and Ev +0.55 eV.
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