Abstract
Main active elements in the frequency range from a few to a hundred gigahertz still are field-effect transistors with Schottky barrier based on gallium arsenide, other AIIIBV compounds and various heterostructures based on them. For optoelectronics, gallium phosphide and its com-pounds are of high importance. As a rule, these heterostructures are obtained by vapor phase me-thods, the use of which requires correct data on volatile components vapor composition. In this work, arsenic and phosphor vapor composition was studied by tensimetric static method. A ma-thematical model for processing of experimental results was built. Data on superheated arsenic vapor pressure were obtained using quartz gauge membrane in the range of temperature 973–1173 K and pressure 1,3∙103–1,9∙104 Pa. The calculations have found that arsenic and phosphor vapor mainly consist of two- and four-atomic molecules. Using best documented reference data on As4, As, P4 and P enthalpies and entropies, corresponding thermodynamic values have been determined for As2: = (178,90 ± 3,77) kJ/mol, = (227,17 ± 5,44) J/(mol•K); and for P2: = (229,01 ± 3,55) kJ/mol, = (156,16 ± 0,83) J/(mol•K).
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