Abstract
We report fabrication of high-mobility In2O3 thin-film transistors (TFTs) and their characterization. In2O3 thin film was deposited by radio-frequency magnetron sputtering method and used as a channel layer. Electrical characterizations revealed excellent performance of the fabricated TFTs such as high ON current, large Imax/Imin ratio, and formation of good Ohmic junctions. Uniform transconductance was observed over large range of gate bias. Especially, transmission line method was applied for different gate overdrive bias Values to extract the effective gate lengths of the fabricated TFTs. This analysis enables to accurately derive the field effect mobility of the TFTs, where the maximum value was calculated to be 53.8 cm2/Vs.
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