Abstract
Studies of the characteristics of ohmic contacts to epitaxial and ion-doped gallium nitride layers based on the Cr/Pt/Au metallization system are presented. The possibility of forming low-resistance contacts without the use of high-temperature treatment is shown. For AlGaN/GaN-based heterostructures, an improvement in the characteristics of Ti/Al/Ni/Au ohmic contacts using ion implantation through a silicon dioxide has been shown.
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