Abstract
Low-temperature device-quality GaAs layers with high resistivity were obtained by pulsed laser deposition. The properties of GaAs layers are sensitive to the process temperature. At a growth temperature of less than 300°C, the layers have low electron mobility and a shift of the GaAs stoichiometry towards the region of arsenic enrichment at a level of 1–2 at.%. At a growth temperature of more than 300° C., the layers show an improved crystalline quality. The dependence of the relative intensity of the As 3d photoelectron line on the growth temperature confirms this trend with a change in the growth temperature.
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