Abstract
The fourth Industrial Revolution will increase the demand for 3D NAND due to the development of technologies such as artificial intelligence and big data in the future. In the manufacturing process of 3D NAND, which stacks semiconductors in a stacked structure, the demand for gas for deposition and etching increases compared to 2D NAND. It is important to remove process gas with high efficiency because it causes global warming effects. To this end, the industry is introducing scrubber technology. In this study, the thermal fluid characteristics of a scrubber capable of decomposing and removing nitrous oxide (N₂O) used to deposit a silicon dioxide (SiO₂) thin film in a semiconductor process were analyzed according to the location of the heater. As a result of the analysis, the pressure and velocity distribution in the scrubber was high in the area of the fluid flowing into the heater, and in terms of heat transfer, the air temperature was found to be affected by the capacity of the heater and the flow rate of the flowing fluid.
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