Abstract
A brief analysis of the causes of inhomogeneous and unstable current distribution between elementary transistors in comb structures (CS) of bipolar (BT) and heterobipolar (HBT) microwave transistors is presented. An expression for the current flowing into a CS elementary transistor, taking into account the emitter track metallization resistance, is derived. An estimation of the influence of technological variation of emitter metallization track resistances on the non-uniformity of the transistor total current distribution between elementary transistors is given. It is shown that resistance of emitter tracks of metallization plays a stabilizing role and leads to increase of thermal stability of current distribution in CS, thus the least stable to thermal breakdown will be elementary transistor of CS with the least resistance of emitter track and the greatest thermal resistance. Recommendations on equalization and increase of stability of current distribution in CS of BT and HBT are offered.
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