Начальные стадии роста пленок цирконата-титаната бария и станната-титаната бария на монокристаллических подложках сапфира и карбида кремния

Abstract

AbstractThe initial stages of growth of barium zirconate titanate and barium stannate titanate ferroelectric films on single-crystal sapphire and silicon carbide are studied for the first time. The choice of substrates is dictated by the possibility of using such structures in ultra-high frequency devices. The growth of discontinuous BaZr_ x Ti_1– x O_3 films is found to be mediated by the gas phase mass transport mechanism in the studied temperature range. For deposition of BaSn_ x Ti_1– x O_3 films, the mechanism of mass transport switches at ~800°C from surface diffusion to gas phase diffusion; also, the films deposited on sapphire and silicon carbide have considerably different elemental composition. The formation of an intermediate SiO_2 layer is noted on silicon carbide during the growth of oxide films on this substrate, its thickness depending on the deposition temperature.