Abstract
The current – voltage characteristics of composite field effect transistors with active layers based on inorganic perovskites - nanocrystals of cesium halides CsPbBr3 embedded in a PFO semiconductor polymer matrix (PFO: CsPbBr3) are analyzed. An increase of the current gain β in the current – voltage characteristics as a negative gate voltage increase was discovered and explained. It is shown that the appearance of additional injection of minority carriers from the electrodes into the induced channel,makes it possible to create the composite light-emitting field-effect transistors with improved characteristics.
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