Abstract
Attenuated total reflection infrared spectroscopy was used to determine the free charge carrier concentration in the arrays of silicon nanowires of characteristic transverse dimension of 50–100 nm and the length of the order of 10 μm which were formed on low-doped crystalline p-type silicon via metal-stimulated chemical etching and subjected to additional thermodiffusion boron doping at the temperatures 850–1000 оС. It was found out that the free hole concentration varies from 5•1018 to 3•1019 cm-3 depending on the annealing temperature and reaches it’s maximum at 900–950 оС. The results can be used to expand the scope of silicon nanowires application in photonics, sensorics and thermoelectric power converters.
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